Charge induced pattern distortion in low energy electron beam lithography

K. M. Satyalakshmi; A. Olkhovets; M. G. Metzler; C. K. Harnett; D. M. Tanenbaum; H. G. Craighead

doi:10.1116/1.1321755

Charge induced pattern distortion in low energy electron beam lithography

K. M. Satyalakshmi, A. Olkhovets, M. G. Metzler, C. K. Harnett, D. M. Tanenbaum, H. G. Craighead

Research output: Contribution to journal › Conference article › peer-review

28 Scopus citations

Abstract

Charge-induced pattern distortions in low voltage electron beam lithography were investigated. Pattern distortion on conducting substrates was found to be small. Pattern placement errors and pattern distortions were observed in the case of electrically insulating substrates. Pattern distortions were found to be influenced by the incident electron energy, pattern size and electrical conductivity. The electron beam deflection is directly proportional to trapped surface charge density.

Original language	English (US)
Pages (from-to)	3122-3125
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	6
DOIs	https://doi.org/10.1116/1.1321755
State	Published - Nov 2000
Event	44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA Duration: May 30 2000 → Jun 2 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1321755

Cite this

@article{137968cf8c7f4d888f38e45bccc0bd1d,

title = "Charge induced pattern distortion in low energy electron beam lithography",

abstract = "Charge-induced pattern distortions in low voltage electron beam lithography were investigated. Pattern distortion on conducting substrates was found to be small. Pattern placement errors and pattern distortions were observed in the case of electrically insulating substrates. Pattern distortions were found to be influenced by the incident electron energy, pattern size and electrical conductivity. The electron beam deflection is directly proportional to trapped surface charge density.",

author = "Satyalakshmi, {K. M.} and A. Olkhovets and Metzler, {M. G.} and Harnett, {C. K.} and Tanenbaum, {D. M.} and Craighead, {H. G.}",

note = "Copyright: Copyright 2007 Elsevier B.V., All rights reserved.; 44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication ; Conference date: 30-05-2000 Through 02-06-2000",

year = "2000",

month = nov,

doi = "10.1116/1.1321755",

language = "English (US)",

volume = "18",

pages = "3122--3125",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Charge induced pattern distortion in low energy electron beam lithography

AU - Satyalakshmi, K. M.

AU - Olkhovets, A.

AU - Metzler, M. G.

AU - Harnett, C. K.

AU - Tanenbaum, D. M.

AU - Craighead, H. G.

PY - 2000/11

Y1 - 2000/11

N2 - Charge-induced pattern distortions in low voltage electron beam lithography were investigated. Pattern distortion on conducting substrates was found to be small. Pattern placement errors and pattern distortions were observed in the case of electrically insulating substrates. Pattern distortions were found to be influenced by the incident electron energy, pattern size and electrical conductivity. The electron beam deflection is directly proportional to trapped surface charge density.

AB - Charge-induced pattern distortions in low voltage electron beam lithography were investigated. Pattern distortion on conducting substrates was found to be small. Pattern placement errors and pattern distortions were observed in the case of electrically insulating substrates. Pattern distortions were found to be influenced by the incident electron energy, pattern size and electrical conductivity. The electron beam deflection is directly proportional to trapped surface charge density.

UR - http://www.scopus.com/inward/record.url?scp=0034314803&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034314803&partnerID=8YFLogxK

U2 - 10.1116/1.1321755

DO - 10.1116/1.1321755

M3 - Conference article

AN - SCOPUS:0034314803

SN - 1071-1023

VL - 18

SP - 3122

EP - 3125

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

T2 - 44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication

Y2 - 30 May 2000 through 2 June 2000

ER -

Charge induced pattern distortion in low energy electron beam lithography

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this