High resolution electron beam lithography on CaF2

P. M. Mankiewich; H. G. Craighead; T. R. Harrison; A. H. Dayem

doi:10.1063/1.94769

High resolution electron beam lithography on CaF₂

P. M. Mankiewich, H. G. Craighead, T. R. Harrison, A. H. Dayem

Houston Methodist

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

30-nm lines on 200-nm centers have been fabricated in CaF//2 using a scanning transmission electron microscope. The lines were written by electron beam radiolysis of a fine grain polycrystalline CaF//2 film and reaction to CaO followed by development in H//2O.

Original language	English (US)
Pages (from-to)	468-469
Number of pages	2
Journal	Applied Physics Letters
Volume	44
Issue number	4
DOIs	https://doi.org/10.1063/1.94769
State	Published - 1984

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{6a2ebecc11b641beb274fe68c407f637,

title = "High resolution electron beam lithography on CaF2",

abstract = "30-nm lines on 200-nm centers have been fabricated in CaF//2 using a scanning transmission electron microscope. The lines were written by electron beam radiolysis of a fine grain polycrystalline CaF//2 film and reaction to CaO followed by development in H//2O.",

author = "Mankiewich, {P. M.} and Craighead, {H. G.} and Harrison, {T. R.} and Dayem, {A. H.}",

year = "1984",

doi = "10.1063/1.94769",

language = "English (US)",

volume = "44",

pages = "468--469",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - High resolution electron beam lithography on CaF2

AU - Mankiewich, P. M.

AU - Craighead, H. G.

AU - Harrison, T. R.

AU - Dayem, A. H.

PY - 1984

Y1 - 1984

N2 - 30-nm lines on 200-nm centers have been fabricated in CaF//2 using a scanning transmission electron microscope. The lines were written by electron beam radiolysis of a fine grain polycrystalline CaF//2 film and reaction to CaO followed by development in H//2O.

AB - 30-nm lines on 200-nm centers have been fabricated in CaF//2 using a scanning transmission electron microscope. The lines were written by electron beam radiolysis of a fine grain polycrystalline CaF//2 film and reaction to CaO followed by development in H//2O.

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U2 - 10.1063/1.94769

DO - 10.1063/1.94769

M3 - Article

AN - SCOPUS:0021374134

SN - 0003-6951

VL - 44

SP - 468

EP - 469

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

High resolution electron beam lithography on CaF₂

Abstract

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