Abstract
We have reduced the measured vertical far-field divergence in a 650 nm laser from 35° to 21° (FWHM), without changing the threshold current, operating voltage or thermal impedance, by introducing additional optical mode expansion layers.
Original language | English (US) |
---|---|
Title of host publication | Conference Digest - IEEE International Semiconductor Laser Conference |
Editors | Anon |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 141-142 |
Number of pages | 2 |
State | Published - 1998 |
Event | Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC - Nara, Jpn Duration: Oct 4 1998 → Oct 8 1998 |
Other
Other | Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC |
---|---|
City | Nara, Jpn |
Period | 10/4/98 → 10/8/98 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics