TY - JOUR
T1 - Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations
AU - Tsamo, Guy
AU - Nastovjak, Alla G.
AU - Shwartz, Nataliya L.
AU - Hoggan, Philip E.
AU - Robert-Goumet, Christine
AU - Pimpinelli, Alberto
AU - Petit, Matthieu
AU - Ranguis, Alain
AU - Gardes, Emmanuel
AU - Sall, Mamour
AU - Bideux, Luc
AU - Monier, Guillaume
N1 - Publisher Copyright:
© 2024 American Chemical Society.
PY - 2024/3/28
Y1 - 2024/3/28
N2 - In this work, we present the conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were designed by GaN droplet epitaxy and studied in situ by X-ray photoelectron spectroscopy and ex situ by atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. These studies were coupled with kinetic Monte Carlo simulations to precisely understand the phenomena occurring during the nitridation and to find the optimum conditions for complete nitridation of gallium droplets. The HRTEM observation showed a cubic (zinc blende) crystal structure of the GaN nanodots for a nitridation at 300 °C. Ramping the temperature from 100 to 350 °C during droplet nitridation enabled to obtain a very high density (>1011cm-2) of GaN nanodots with the zinc blende crystallinity.
AB - In this work, we present the conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were designed by GaN droplet epitaxy and studied in situ by X-ray photoelectron spectroscopy and ex situ by atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. These studies were coupled with kinetic Monte Carlo simulations to precisely understand the phenomena occurring during the nitridation and to find the optimum conditions for complete nitridation of gallium droplets. The HRTEM observation showed a cubic (zinc blende) crystal structure of the GaN nanodots for a nitridation at 300 °C. Ramping the temperature from 100 to 350 °C during droplet nitridation enabled to obtain a very high density (>1011cm-2) of GaN nanodots with the zinc blende crystallinity.
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U2 - 10.1021/acs.jpcc.3c07945
DO - 10.1021/acs.jpcc.3c07945
M3 - Article
AN - SCOPUS:85187922238
SN - 1932-7447
VL - 128
SP - 5168
EP - 5178
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 12
ER -