Oxidation behaviour of electroconductive Si3N4TiN composites

A. Bellosi; Anna Tampieri; Yu Zhen Liu

doi:10.1016/0921-5093(90)90197-B

Oxidation behaviour of electroconductive Si₃N₄TiN composites

A. Bellosi, Anna Tampieri, Yu Zhen Liu

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

The presence of dispersed TiN particles in an Si₃N₄ matrix deeply affects the oxidation resistance at low (600-1000°C) and high temperatures. The thermal stability of dense Si₃N₄TiN composites up to 1350°C in air results in different oxidation regimes: up to 1000°C only the oxidation of TiN to TiO₂ (rutile) takes place, where the second-order reaction is likely to be the governing step. From 1000 to 1200°C diffusion (O₂ or N₂) through a TiO₂ layer could be indicated as the rate-limiting step. At T {greater-than or approximate} 1200°C, parabolic oxidation kinetics indicates diffusion mechanisms. The diffusion of yttrium and aluminium cations from the bulk to the reaction interface is believed to govern the process in the baseline matrix; for the composites the structure and composition of the bulk and the development of complex product layers modify the migration mechanisms of the various mobile participants. However, a strong increase in the oxidation rate is associated with the presence of TiN.

Original language	English (US)
Pages (from-to)	115-122
Number of pages	8
Journal	Materials Science and Engineering A
Volume	127
Issue number	1
DOIs	https://doi.org/10.1016/0921-5093(90)90197-B
State	Published - Jan 1 1990

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Oxidation behaviour of electroconductive Si3N4TiN composites",

abstract = "The presence of dispersed TiN particles in an Si3N4 matrix deeply affects the oxidation resistance at low (600-1000°C) and high temperatures. The thermal stability of dense Si3N4TiN composites up to 1350°C in air results in different oxidation regimes: up to 1000°C only the oxidation of TiN to TiO2 (rutile) takes place, where the second-order reaction is likely to be the governing step. From 1000 to 1200°C diffusion (O2 or N2) through a TiO2 layer could be indicated as the rate-limiting step. At T {greater-than or approximate} 1200°C, parabolic oxidation kinetics indicates diffusion mechanisms. The diffusion of yttrium and aluminium cations from the bulk to the reaction interface is believed to govern the process in the baseline matrix; for the composites the structure and composition of the bulk and the development of complex product layers modify the migration mechanisms of the various mobile participants. However, a strong increase in the oxidation rate is associated with the presence of TiN.",

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AU - Bellosi, A.

AU - Tampieri, Anna

AU - Liu, Yu Zhen

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N2 - The presence of dispersed TiN particles in an Si3N4 matrix deeply affects the oxidation resistance at low (600-1000°C) and high temperatures. The thermal stability of dense Si3N4TiN composites up to 1350°C in air results in different oxidation regimes: up to 1000°C only the oxidation of TiN to TiO2 (rutile) takes place, where the second-order reaction is likely to be the governing step. From 1000 to 1200°C diffusion (O2 or N2) through a TiO2 layer could be indicated as the rate-limiting step. At T {greater-than or approximate} 1200°C, parabolic oxidation kinetics indicates diffusion mechanisms. The diffusion of yttrium and aluminium cations from the bulk to the reaction interface is believed to govern the process in the baseline matrix; for the composites the structure and composition of the bulk and the development of complex product layers modify the migration mechanisms of the various mobile participants. However, a strong increase in the oxidation rate is associated with the presence of TiN.

AB - The presence of dispersed TiN particles in an Si3N4 matrix deeply affects the oxidation resistance at low (600-1000°C) and high temperatures. The thermal stability of dense Si3N4TiN composites up to 1350°C in air results in different oxidation regimes: up to 1000°C only the oxidation of TiN to TiO2 (rutile) takes place, where the second-order reaction is likely to be the governing step. From 1000 to 1200°C diffusion (O2 or N2) through a TiO2 layer could be indicated as the rate-limiting step. At T {greater-than or approximate} 1200°C, parabolic oxidation kinetics indicates diffusion mechanisms. The diffusion of yttrium and aluminium cations from the bulk to the reaction interface is believed to govern the process in the baseline matrix; for the composites the structure and composition of the bulk and the development of complex product layers modify the migration mechanisms of the various mobile participants. However, a strong increase in the oxidation rate is associated with the presence of TiN.

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Oxidation behaviour of electroconductive Si₃N₄TiN composites

Abstract

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