TY - GEN
T1 - The effect of temperature on the etch rate and roughness of surfaces etched with XEF2
AU - Butner, Joseph
AU - Leseman, Zayd C.
PY - 2010
Y1 - 2010
N2 - In this work we present results from a pulsed etching system with XeF2 for an expanded temperature range while at the same time determining the roughness of the substrate left behind. The experimental apparatus used for the work presented in this paper is capable of temperature ranges from approximately 100 to 800 K. Data was taken at a constant etching pressure of 1.2 Torr so the effect of temperature on roughness and etch rate could be studied. Etch rates and surface roughnesses were characterized using a vertical scanning and phase shifting interferometer, respectively.
AB - In this work we present results from a pulsed etching system with XeF2 for an expanded temperature range while at the same time determining the roughness of the substrate left behind. The experimental apparatus used for the work presented in this paper is capable of temperature ranges from approximately 100 to 800 K. Data was taken at a constant etching pressure of 1.2 Torr so the effect of temperature on roughness and etch rate could be studied. Etch rates and surface roughnesses were characterized using a vertical scanning and phase shifting interferometer, respectively.
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U2 - 10.1115/IMECE2010-38971
DO - 10.1115/IMECE2010-38971
M3 - Conference contribution
AN - SCOPUS:84881468708
SN - 9780791844472
T3 - ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)
SP - 565
EP - 568
BT - ASME 2010 International Mechanical Engineering Congress and Exposition, IMECE 2010
T2 - ASME 2010 International Mechanical Engineering Congress and Exposition, IMECE 2010
Y2 - 12 November 2010 through 18 November 2010
ER -